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3.4GHz to 3.8GHz SiGe
Low-Noise Amplifier/PA Predriver
ABSOLUTE MAXIMUM RATINGS
V CC to GND ...........................................................-0.3V to +6.0V
GAIN, SHDN , RFOUT to GND .....................0.3V to (V CC + 0.3V)
RFIN Input Power (50 ? source)........................................16dBm
Minimum R BIAS ....................................................................10k ?
Operating Temperature Range ...........................-40 ° C to +85 ° C
Junction Temperature ......................................................+150 ° C
Storage Temperature Range .............................-65 ° C to +150 ° C
Lead Temperature (soldering, 10s) .................................+300 ° C
Continuous Power Dissipation (T A = +70 ° C)
10-Pin μMAX-EP
(derate 10.3mW/ ° C above T A = +70 ° C) ....................825mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
CAUTION! ESD SENSITIVE DEVICE
DC ELECTRICAL CHARACTERISTICS
(V CC = +3.0V to +5.5V, GAIN = SHDN = V CC , R BIAS = 20k ? , no RF signals applied, T A = -40 ° C to +85 ° C. Typical values are at V CC
= +3.3V, T A = +25 ° C, unless otherwise indicated.) (Note 1)
PARAMETER
Supply Voltage
Operating Supply Current
R BIAS = 20k ? ,
T A = +25 ° C
R BIAS = 20k ? ,
T A = -40 ° C to +85 ° C
CONDITIONS
GAIN = V CC
GAIN = GND
GAIN = V CC
GAIN = GND
MIN
3.0
TYP
9.2
2.7
MAX
5.5
10.9
3.9
11.6
4.0
UNITS
V
mA
R BIAS = 15k ? ,
T A = +25 ° C
GAIN = V CC
GAIN = GND
12
3.6
Shutdown Supply Current
SHDN = GND
0.1
2
μA
Input Logic Voltage High
Input Logic Voltage Low
GAIN, SHDN
GAIN, SHDN
2.0
0.6
V
V
Input Logic Bias Current
GAIN = SHDN = V CC
GAIN = SHDN = GND
-10
1
μA
2
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